Parameter Identification: Gate Sensor for Power Transistor Tolerance Compensation in Advanced Gate Driver ICs

Konferenz: PCIM Europe 2024 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
11.06.2024-13.06.2024 in Nürnberg, Germany

doi:10.30420/566262015

Tagungsband: PCIM Europe 2024

Seiten: 7Sprache: EnglischTyp: PDF

Autoren:
Satheesh, Rakshith; Wille, Christopher; Kulkarni, Pushkar; Menzel, Andreas; Rosahl, Thoralf

Inhalt:
This paper introduces an innovative approach to optimize power module performance by implementing a Parameter Identification (PI) mode in advanced high voltage gate drivers, which can enhance both the efficiency and lifespan of power electronic systems. The paper details the development and integration of the PI mode within the gate driver architecture. We present a comprehensive analysis of the test conditions and experimental results, demonstrating several options PI offers to enhance system performance. The findings underscore the potential of integrating parameter identification capabilities in gate drivers to achieve optimal power module operation, offering substantial benefits in terms of energy efficiency and system robustness.