Accelerated Power Cycling of GaN HEMTs using Switching Loss and Fast Temperature Measurement
Konferenz: PCIM Europe 2024 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
11.06.2024-13.06.2024 in Nürnberg, Germany
doi:10.30420/566262009
Tagungsband: PCIM Europe 2024
Seiten: 10Sprache: EnglischTyp: PDF
Autoren:
Leung, Wing Tai; Niroomand, Mehdi; Jahdi, Saeed; Stark, Bernard H.
Inhalt:
Power cycling is typically performed by periodically self-heating a power device using a DC current. This paper demonstrates a technique to boost the heating power to shorten the heating phase, by the addition of switching loss. This power cycling technique is demonstrated on 190 mOmega, 600 V Gallium Nitride (GaN) discrete devices, where it achieves 240,000 thermal cycles per week with a junction temperature swing