An improved ultrafast Desaturation-based Protection scheme for GaN HEMT

Inhalt:
In this paper, an improved ultra-fast desaturation-based protection scheme for GaN HEMTs (Gallium Nitride High Electron Mobility Transistors) is proposed. The conventional desaturation-based overcurrent protection (OCP) scheme encounters performance challenges when a negative gate voltage is employed to turn off GaN devices. The proposed scheme addresses this issue. To verify the performance of the proposed scheme, experiments were conducted using a high-power prototype consisting of three paralleled 150-A and six paralleled 30-A GaN switches, and the experimental results are presented.