New generation high power semiconductors for 8GW VSC-HVDC applications
Konferenz: PCIM Asia 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
29.08.2023-31.08.2023 in Shanghai, China
doi:10.30420/566131065
Tagungsband: PCIM Asia 2023
Seiten: 6Sprache: EnglischTyp: PDF
Autoren:
Tsyplakov, Evgeny; Gupta, Gaurav; Jones, Jeremy; Boksteen, B.; Michelis, L. D.; Winter, Christian; Chen, Makan (Hitachi Energy Switzerland Ltd. Semiconductors, Switzerland)
Vobecky, Jan (Hitachi Energy s.r.o. Semiconductors, Czech Republic)
Inhalt:
Recent development efforts have targeted a further increase in single device current capability of IGBT (Insulated Gate Bipolar Transistor) and fast recovery diode. As a result, a 5 kA IGBT press-pack device has been realized with matching freewheeling Bipolar diode, both making record in power rating. The module features a new generation of planar IGBT device optimized for lower on-state losses leading to higher current capability and lower collector-emitter leakage allowing higher temperature operation. The new Bipolar fast recovery diode with surge current capability of 100kA brings more system design freedom and enhanced thermal properties. In this paper we report the recent developments, present the device design concept and characteristic and assess their application potential through simulation multi-GW VSC-HVDC applications.