Using Test-to-Fail Methodology to Predict How GaN Devices Can Last More than 25 Years in Solar Applications

Inhalt:
Microinverters and power optimizers are widely utilized in modern solar panels to maximize energy efficiency and conversion. Such topologies and implementations usually require a minimum of 25 years of lifetime, which is becoming a critical challenge for market adoption. Low voltage gallium nitride (GaN) power devices (VDS rating < 200 V)are a promising solution and are being used extensively by increasing number of solar manufac-turers. In this paper, a test-to-fail approach isadopted and applied to investigate the intrinsic underlying wear-out mechanisms that are responsible for the key reliability stressors identified. Thestudy enables the development of physics-basedlifetime models that can accurately project the life-times under the unique demands of mission profiles in solar applications.