2.3kV Si and SiC devices development for renewable energy system
Konferenz: PCIM Asia 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
29.08.2023-31.08.2023 in Shanghai, China
doi:10.30420/566131028
Tagungsband: PCIM Asia 2023
Seiten: 5Sprache: EnglischTyp: PDF
Autoren:
Chen, Shuangching; Sekino, Yusuke; Takaku, Taku; Okumura, Keiji; Uchida, Takafumi; Mitsuzuka, Kaname; Onozawa, Yuichi; Kusunoki, Yoshiyuki; Kobayashi, Yasuyuki (Fuji Electric Co. Ltd., Japan)
Song, Chen (Fuji Electric Co. Ltd., China)
Inhalt:
Newly developed 2.3kV Si-IGBT and SiC-MOSFET devices are introduced in this paper. The 2.3kV devices are suitable for 1500Vdc renewable energy system applications. A 1.7kV device is insufficient for 1500Vdc applications due to the low breakdown voltage. A 3.3kV device has high breakdown voltage but the on-state voltage loss and switching losses are large. Therefore, there is a strong demand for devices with the blocking voltage between 1.7kV and 3.3kV. To meet this demand, Fuji Electric has developed 2.3kV Si-IGBT and SiC-MOSFET with trench gate structure. The 2.3kV devices have high cost performance and efficiency compared to the 3.3kV device. The 2.3kV devices will enable the user to realize a simple, highly efficient, and cost-effective two-level inverter circuit for 1500Vdc applications instead of a 3-level NPC circuit with 1.2kV devices.