A Variable Bypass Current Source Driver Circuit Based on Reference Voltage
Konferenz: PCIM Asia 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
29.08.2023-31.08.2023 in Shanghai, China
doi:10.30420/566131014
Tagungsband: PCIM Asia 2023
Seiten: 6Sprache: EnglischTyp: PDF
Autoren:
Ma, Mingcheng; Lin, Chengyang; Sun, Tianlin; Xu, Dianguo (Harbin Institute of Technology, China)
Inhalt:
Conventional gate drive (CGD) strategies for insulated-gate bipolar transistors (IGBTs) face challenges in balancing switching losses with voltage and current spikes. Active gate drivers (AGD), on the other hand, can be controlled in stages to suppress these spikes and minimize switching losses. In this paper, we propose a new driving circuit – a variable bypass current source driver circuit based on reference voltage (VBCD), which uses the reference voltage to adjust the current magnitude of the bypass current source, thereby controlling the switching transient of the IGBT state. Experimental results show that under the same conditions, VBCD can reduce switching losses, suppress voltage and current spikes, and maximize the performance of IGBT devices compared with CGD.