Driver Optimization Method Based on GeneticAlgorithm for IGBT

Inhalt:
This article proposes a technique called Genetic Algorithm Gate Driver (GAGD) that utilizes genetic algorithms to optimize the gate driving characteristics. To achieve this, a gate characteristic testing platform with high bandwidth, high voltage swing, and high output speed is designed. This platform uses genetic algorithms to generate gate voltage waveforms, drive insulated gate bipolar transistors (IGBTs), and optimize the output voltage waveform. The gate driving method of the IGBT is iteratively optimized under the constraints of turn-on losses and turn-on stress. Finally, experimental comparisons are conducted with traditional gate driving techniques during the turn-on process. The experimental results demonstrate that the optimized drive mode using genetic algorithms exhibits good transient characteristics.