The Research on Influencing Factors of 650V IGBT’s Turn-off dVce/dt Controllability
Konferenz: PCIM Asia 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
29.08.2023-31.08.2023 in Shanghai, China
doi:10.30420/566131011
Tagungsband: PCIM Asia 2023
Seiten: 4Sprache: EnglischTyp: PDF
Autoren:
Li, Rui; Ma, Keqiang; Wang, Siliang; Xiang, Yi; Liu, Liangkai; Yang, Ke (Chengdu Semi-Future Technology Co., Ltd., China)
Inhalt:
The high dVce/dt controllability of IGBT is indispensable for the realization of high power conversion and high switching speed. However, during the switching process of IGBT, the dynamic avalanche phenomenon will greatly affect the controllability of dVce/dt. The controllability of dVce/dt during turn-off period is explored in this paper. Through experimental test data and simulation, the influences of frontal structure (FSTR) and application conditions of IGBT on the controllability of dVce/dt are analyzed.