Modeling and Validation of a Silicon-Carbide Power Module
Konferenz: PCIM Asia 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
29.08.2023-31.08.2023 in Shanghai, China
doi:10.30420/566131005
Tagungsband: PCIM Asia 2023
Seiten: 8Sprache: EnglischTyp: PDF
Autoren:
Zhang, Leon (Lizhen); Paul, Roveendra; Victory, James; Tian, Bo (onsemi, USA)
Cho, Dylan (onsemi, South Korea)
Inhalt:
This paper presents a study on the modeling and vali-dation of a Silicon-Carbide (SiC) power module for electric vehicle (EV) traction inverters. The fast-switching characteristics of SiC MOSFETs present challenges for power module design, specifically due to their sensitivity to parasitic inductances and die level parametric mismatch. Using ANSYS(r) tools we extract the parasitic RLC of the module, develop an equivalent circuit model, and perform electrical, thermal, and Joule heating simulations. Our modeling approach is validated with actual test results, followed by an investigation of die level current-sharing. We conclude with proposed mitigation measures to enhance the power module's ruggedness.