Accurate Switching Behavior Modeling for SiC MOSFETs Considering Dynamic Output Characteristics
Konferenz: PCIM Asia 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
29.08.2023-31.08.2023 in Shanghai, China
doi:10.30420/566131003
Tagungsband: PCIM Asia 2023
Seiten: 6Sprache: EnglischTyp: PDF
Autoren:
Zhou, Yimin; Wang, Zhiqiang; Yang, Yayong; Xin, Guoqing; Shi, Xiaojie; Kang, Yong (Huazhong University of Science and Technology, China)
Inhalt:
Accurate estimation of silicon carbide (SiC) MOSFET switching characteristics is critical for the pre-design of power converters. Limited by incomprehensive capacitance and output characteristics, the datasheet-driven modeling approach cannot perform high-accuracy pre-diction of switching behavior. As a result, this paper pro-poses a novel modeling approach by considering the nonlinear parasitic capacitance and dynamic output characteristics. Experimental results under different operating conditions verify the improved accuracy of the proposed model compared with the existing datasheet-driven model.