The new generation of Gallium Nitride Power devices; breaking the limits of ease-of-use and reliability

Inhalt:
The power devices field has seen tremendous changes in the last decade. The traditional silicon MOSFETs and IGBTs are being replaced by Silicon Carbide and GaN power devices. While SiC offers a mature technology, GaN, in spite of its enhanced potential still needs to address issues such as robustness and ease-of-use. This paper will look into a new generation of GaN devices (ICeGaN) which addresses the ease-of-use and has the potential to outplay both Silicon and Silicon Carbide in terms of gate ruggedness and reliability.