Fast Switching of High Power GaN Transistors
Konferenz: PCIM Europe 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09.05.2023-11.05.2023 in Nürnberg, Germany
doi:10.30420/566091367
Tagungsband: PCIM Europe 2023
Seiten: 10Sprache: EnglischTyp: PDF
Autoren:
Shelton, Ed; Rogers, Dan (University of Oxford, UK)
Lu, Lucas; Kou, Lei (GaN Systems, Canada)
Castellino, Juan (Cambridge Design Partnership, UK)
Palmer, Patrick (Simon Fraser University, Canada)
Inhalt:
This paper presents a gate-driving strategy for achieving fast switching edges from GaN HEMT devices. Switching lasses can be reduced by using zero-ohms external gate resistance. Further reductions are achieved by overcoming the limitations of internal gate resistance with gate voltage boosting during key regions of the switching transition.