Device Model of CSTBT with Highly Dosed Carrier Density in CS Layer

Inhalt:
This paper proposes an IGBT(CSTBT) model based on a physical model, for circuit simulation that is widely applied in inverters for motor control. The target CSTBT has highly dosed electron density in carrier stored N layer (CS layer) and highly effects on turn-on operation faster. The model is based on MOSFET and PiN Diode with voltage dependent capacitances (CCG and CCE) and constant CGE and is featured that a dynamical phenomenon which hole as carrier stored in CS layer around gate structure conducts steeply through channel is expressed by a structure consisted of a capacitor at drain part of MOSFET and an imaginary power supply with switch. And the proposed model is validated by compar-ison between simulation and actual measurement of current dependencies of switching losses and speeds.