1200 V TRENCHSTO(TM) IGBT7 H7 and Emitter-Controlled EC7 Rapid Diode Technologies Define an Enhanced Benchmark for Improved Energy-Efficient, Fast-Switching Inverter Applications
Konferenz: PCIM Europe 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09.05.2023-11.05.2023 in Nürnberg, Germany
doi:10.30420/566091303
Tagungsband: PCIM Europe 2023
Seiten: 7Sprache: EnglischTyp: PDF
Autoren:
Cerezo, Jorge; Sekar, Ajith Kumar (Infineon Technologies Austria AG, Austria)
Inhalt:
This paper presents the new 1200 V IGBT7 H7 discrete family, which uses the latest 1200 V TRENCHSTOP(TM) IGBT7 H7 and emitter-controlled EC7 Rapid diode technologies, optimized for fast-switching industrial applications. The enhanced performance of these technologies results in lower conduction and switching power losses, and thus lower operating junction temperatures, achieving higher efficiency, power density, and reliability for modern, industrial hard-switching inverter systems.