Dynamic Characterisation of 1200V-SiC-MOSFETs for High Current Applications in TO247-4-Packages

Konferenz: PCIM Europe 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09.05.2023-11.05.2023 in Nürnberg, Germany

doi:10.30420/566091290

Tagungsband: PCIM Europe 2023

Seiten: 10Sprache: EnglischTyp: PDF

Autoren:
Brandt, Soenke; Meissner, Michael; Fehrenbach, Dietmar; Rasch, Martin; Hoffmann, Klaus F. (Helmut Schmidt University, Germany)
Wagner, Bernhard (Philips Medical Systems DMC GmbH, Germany)

Inhalt:
According to the recent trend, SiC-MOSFETs have been increasingly conquering the sector of high power semiconductors. This also includes the field of discrete devices for high frequency high current applications which has been dominated by Si-IGBTs in the past and the present. Compared to these Si-IGBTs the wide band gap (WBG) devices can perform very fast switching with very high slew rates. In the proposed survey, state of the art discrete SiC-MOSFETs will be analysed in a high quality measurement setup in order to rate and compare the dynamic characteristics.