Busbar Optimization Design for Low Parasitic Inductance SiC Power Module

Inhalt:
SiC devices have the advantages of fast switching speed, imposing higher requirements on power mod-ule packaging, especially the power loop parasitic inductance. Therefore, SiC power module package design is one of the hot topics, which is a repetitive process of optimization. In this paper, the concept design of a SiC power module is introduced. In order to achieve low inductance, the busbar is optimized by using the proximity effect within the power commutation loop. Finally, the power loop inductance is reduced by 41% from 8.18nH to 4.81nH, which is a great improvement and shows the importance of utilizing the proximity effect for power module design.