Power Cycling of Discrete Devices with very high Power Density
Konferenz: PCIM Europe 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09.05.2023-11.05.2023 in Nürnberg, Germany
doi:10.30420/566091216
Tagungsband: PCIM Europe 2023
Seiten: 8Sprache: EnglischTyp: PDF
Autoren:
Heimler, Patrick; Reiter, Kristiane; Gesell, Soeren; Lutz, Josef; Basler, Thomas (Chemnitz University of Technology, Germany)
Inhalt:
In this work, discrete devices (Si IGBT and SiC MOSFET) have been tested at high power densities in power cycling tests. The power dissipation related to the total chip area was approx. 54.7 W/mm2 for the MOSFET and approx. 12.3 W/mm2 for the IGBT. These are the highest power densities that are currently realizable in an application-close test setup to our knowledge. All test specimens failed due to bond wire degradation and the failure mode was an increase in forward voltage. No change in the calibration curves, which were used for temperature determination during the power cycling test, is recognizable.