Reliability Assessment of Latest SiC Chip and Packaging Technology
Konferenz: PCIM Europe 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09.05.2023-11.05.2023 in Nürnberg, Germany
doi:10.30420/566091213
Tagungsband: PCIM Europe 2023
Seiten: 6Sprache: EnglischTyp: PDF
Autoren:
Thomas, Sven; Fabian, Benjamin; Mustain, Habib; Fery, Christophe (Heraeus Deutschland GmbH & Co. KG, Germany)
Romero, Amy; Mikirtichev, Anri; Casady, Jeffrey (Wolfspeed, USA)
Inhalt:
Increasing power density requirements for power electronic modules increases the challenges for chips and packaging materials in terms of reliability and current density. This paper addresses the reliability of the latest SiC MOSFET generation with 1200 V, 14 mOmega, 25 mm2 with respect to power cycling (PwC) and temperature shock tests (TST). While aggressive power cycling tests up to 200 °C were presented earlier, the failure analysis will be further elaborated and compared with additional PwC tests and TST tests. The results are confirmed by finite element simulation (FEM), which helps to explain differences in the number of cycles achieved.