Characterization of Constant-Gate-Charge Scaled SiC Power MOSFETs
Konferenz: PCIM Europe 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09.05.2023-11.05.2023 in Nürnberg, Germany
doi:10.30420/566091208
Tagungsband: PCIM Europe 2023
Seiten: 7Sprache: EnglischTyp: PDF
Autoren:
Ngu, Benjamin (General Motors, USA & Center for Power Electronics Systems, Virginia Tech, USA)
DiMarino, Christina (Center for Power Electronics Systems, Virginia Tech, USA)
Cooper, James (Sonrisa Research, USA)
Sampath, Madankumar (School of Electrical and Computer Engineering and BIRCK Nanotechnology Center, Purdue University, USA)
Inhalt:
In this paper, we demonstrate the static and dynamic performance of 900 V SiC power MOSFETs with active areas of 0.03513 cm2 designed for constant-gate-charge scaling (CGCS). CGCS increases the short circuit withstand time (SCWT) of the power device by decreasing the gate oxide thickness and gate drive voltage while maintaining the oxide field strength. Prior work has shown that the SCWT of a 12 nm gate oxide device increased by a factor of 2-2.4x, from 14 mus to 34 mus at 600 Vdc, when compared to a 50 nm gate oxide device. Static and dynamic characterization confirms that conduction and switch-ing losses of these devices are equal.