Advantages of Synchronous Bootstrap Methods Over Conven-tional Methods to Prevent Bootstrap Overcharge in GaN Drivers
Konferenz: PCIM Europe 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09.05.2023-11.05.2023 in Nürnberg, Germany
doi:10.30420/566091154
Tagungsband: PCIM Europe 2023
Seiten: 10Sprache: EnglischTyp: PDF
Autoren:
Mazany, Alexander (Texas Instruments, USA)
Inhalt:
Due to their structure, GaN FETs are more prone to damage due to bootstrap overcharging than MOSFETs. This paper summarizes why this issue occurs. In addition, seven different methods for preventing or alleviating bootstrap overcharging are compared. It is found that methods involving a series switch in the bootstrap path can offer improved performance over passive methods by many metrics.