A Variable Gate Resistance SiC MOSFET Driver Network to Mitigate Overshoot and Parasitic Ringing

Inhalt:
Compared to silicon devices, wide-bandgap devices based on silicon carbide (SiC) are able to operate at higher voltages and currents. Additionally, higher switching frequencies and lower losses can be achieved, leading to high dv/dt and di/dt. This can lead to overshoots and parasitic ringing, increasing the switching losses which reduces the overall efficiency and increases electromagnetic interference. The proposed active gate driver network reduces overshoots and parasitic ringing while maintaining the advantage of a fast switching transient.