Universal Isolated Gate Driving Platform for 650 V GaN HEMTs Half-Bridge with Dead-Time Control and Integrated Bias Supply

Inhalt:
This paper introduces a universal isolated gate driving platform for 650 V GaN HEMTs half-bridge as a building block for totem-pole PFC and high-voltage resonant DC-DC converters. It is based on a dual-channel galvanic isolated gate driver IC with integrated protections such as dead-time control and shoot-through protection. The platform also includes a flexible bias supply configurable for bipolar or unipolar operation with different voltage levels and an option for 1% voltage regulation, which is particularly important while driving Schottky gate (SG) GaN HEMTs. Test results obtained with 650 V gate injection transistor (GIT) and SG GaN HEMTs successfully demonstrate reliable operation at MHz and kW range.