Performance Enhancement of a SiC Power Semiconductor Module

Inhalt:
SiC MOSFETs feature a very low specific on-state resistance and high switching dynamics, leading to overall low losses in an application. However, stray inductance in the commutation path of the module limits the performance due to drain-source overvoltages. Additionally, the necessary short-circuit ruggedness on module level has an impact on the performance. This work presents experimental results regarding a possible SiC power module performance enhancement utilizing a controlled parasitic turn-on during the passive turn-off event in a phase leg. A Compact SiC Line power semiconductor module is introduced as the test vehicle for the investigation.