Advanced PKG technology for SiC in the NX Package

Inhalt:
SiC-MOSFETs offer several advantages to the application especially when operated at high switching speeds and high switching frequencies. The packaging utilized for the SiC-MOSFETs must be suitable for operation at high switching speeds. The NX package is an established package for industrial Si IGBT applications. Adaptation of the NX package for the SiC-MOSFETs technology brings with it certain challenges related to internal stray inductance and current sharing between the parallel connected chips. This paper provides measurement results to show the optimized design (internal parasitic inductance and current sharing) of the NX package developed for the SiC-MOSFETs. By adopting this package, it is possible to take advantage of the characteristics of SiC-MOSFETs.