The New XHP2 Module Using 3.3 kV CoolSiC MOSFET and .XT Technology

Inhalt:
The trend towards higher power density in traction and medium voltage drives applications can be addressed by the XHPTM 2 package equipped with 3.3 kV CoolSiCTM MOSFET. The introduction of silicon carbide into high voltage applications has enabled significant reduction in losses, volume, noise, and cooling efforts. Critical material parameters of SiC accompanied by high current densities and the demand for high power cycling capabilities led to the implementation of the .XT joining technology for CoolSiCTM MOSFET. This paper describes the design of the first XHPTM 2 module equipped with a 3.3 kV CoolSiCTM MOSFET and its dynamic performance. The parasitic turn-on behavior and the impact of dead time on switching performance are also demonstrated.