Evaluation of Silicon-Based 3-Level T-Type Neutral Boost Rectifier Integrated into SMPD Package for EV-Charger Application
Konferenz: PCIM Europe 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09.05.2023-11.05.2023 in Nürnberg, Germany
doi:10.30420/566091099
Tagungsband: PCIM Europe 2023
Seiten: 6Sprache: EnglischTyp: PDF
Autoren:
Haehre, Karsten; Yassof, Muhammad; Schulz, Martin (Littelfuse, Germany)
di Fulvio, Philippe (Littelfuse, France)
Inhalt:
Public DC-charging infrastructure is connected to the public three-phase low-voltage grid. Therefore, it must comply to the corresponding grid codes. The widely adopted Vienna Rectifier variants allow fulfilling this requirement and offer very high efficiency at low circuit complexity. The 3-level T-type neutral boost rectifier, also known as the original Vienna Rectifier, allows the use of fast 650 V Silicon-switches and fast 1200 V diodes. In this paper, an evaluation is presented how the 3-level T-Type neutral boost rectifier can be integrated into a compact Surface Mounted Power Device (SMPD) package and what power- and efficiency-levels can be achieved with different diode types.