Impact of Operating a SiC-MOSFETs Body Diode Beyond its SOA
Konferenz: PCIM Europe 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09.05.2023-11.05.2023 in Nürnberg, Germany
doi:10.30420/566091076
Tagungsband: PCIM Europe 2023
Seiten: 8Sprache: EnglischTyp: PDF
Autoren:
Rauh, Michael; Bakran, Mark-M. (University of Bayreuth, Department of Mechatronics, Centre for Energy Technology, Germany)
Maerz, Andreas; Schoenewolf, Stefan (Siemens Mobility GmbH, Nürnberg, Germany)
Inhalt:
To lower the switching-losses of SiC-Power-MOSFETs in a half-bridge setup, the switching speed can be maximized by using dead-time-optimization. Due to a short dead-time, the reverse recovery current after the interlock period between both switches is minimized, and therefore, the overvoltage during the diode turn-off is lowered. However, if the driver fails to meet the required dead-time, the overvoltage across the diode increases. In the worst case, the body diode will be operated under avalanche conditions due to high switching stress. This paper investigates the influence of repetitive avalanche stress on a SiC-Power-MOSFET’s body diode concerning possible degradation of the semiconductor.