Simulation Study of the Effect of Threshold Voltage Hysteresis on Switching Characteristics of SiC MOSFETs
Konferenz: PCIM Europe 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09.05.2023-11.05.2023 in Nürnberg, Germany
doi:10.30420/566091028
Tagungsband: PCIM Europe 2023
Seiten: 5Sprache: EnglischTyp: PDF
Autoren:
Cai, Yumeng; Xu, Hao; Sun, Peng; Zhao, Zhibin; Li, Xuebao (State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources (North China Electric Power University), China)
Deng, Erping (Hefei University of Technology, China)
Nee, Hans-Peter (KTH Royal Institute of Technology, Sweden)
Inhalt:
The effect of VTH hysteresis on switching characteristics of SiC MOSFETs is investigated by TCAD in this paper. A device-circuit mixed-mode simulation model is built to simulate VTH hysteresis. The result illustrates that VTH hysteresis decreases VTH and increases channel mobility, which leads to earlier turn-on and larger ID. Moreover, the higher the interface state density (Dit) is, the more obvious the transient effect. However, ID remains unchanged with VTH hysteresis and it decreases with higher Dit without considering VTH hysteresis. Therefore, the VTH hysteresis is beneficial and the findings can be useful for distributing Dit when modeling the chip process.