Research of characterization for activation rate of ion implantation in SiC Power Device Manufacturing

Inhalt:
The effective activation of P-zone is closely related to the blocking voltage, on-state resistance and switching characteristics of SiC devices. The activation rate of P-zone directly affects the current density This paper investigates the effects of different ion implantation energies and doses on the substitution activation rate and electron activation rate. The characterization method including TLM test, Hall test and SIMS test. In addition, the research explores how to calculate the activation rate significantly and accurately. The experimental results show that the activation rate of annealing conditions at 1750 °C, 30 min, 1800 °C and 10 min is better than other parameters. With the increase of doping concentration, the activation rate first increases and then decreases, and reaches the highest at the doping concentration of 1.19E19.