Introduction to FinFET: Formation process, Strengths, and Future Exploration

Inhalt:
The paper introduces the formation, development, and future exploration of FinFET. It introduces the invention history, the formation and working principle of conventional bulk FinFET with three gates. The current technological level of FinFET is also subsequently shown with TBG JL FinFET. In the next section, by calculating the relational equation of mobility and impurity concentration and observing the gate voltage change data, the paper compares FinFET with MOSFET in three aspects to demonstrate the advantages of FinFET: carrier mobility, short channel effect, and subthreshold leakage current, and chip area. After discussing the advantages of FinFET, challenges in its development will be described, i.e., corner effect (fin shape), parasitic capacitance and resistance, and fin patterning. In the future, one possible exploration to maximize the potential of FinFET is to promote the development and application of GAAFETs based on FinFETs technology.