Short-circuit and overcurrent protection scheme of SiC MOSFET based on combined protection method
Konferenz: PCIM Asia 2022 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
26.10.2022 - 27.10.2022 in Shanghai, China
Tagungsband: PCIM Asia 2022
Seiten: 8Sprache: EnglischTyp: PDF
Autoren:
Li, Tao; Zhang, Xiangfei; Qi, Xueqing (Beijing Smartchip Microelectronics Technology Company Limited, China)
Ye, Zhijing; Li, Chi; Zheng, Zedong (Tsinghua University, China)
Inhalt:
This article aims at achieving a faster and more reliable short-circuit (SC) and overcurrent (OC) protection circuit integrated on the driver board of SiC MOSFETs. By combining classic desaturation protection methods with parasitic-inductancebased protection methods, it can achieve complementary advantages of protection circuits for SiC MOSFETs. This article firstly makes a review of present SC and OC protection methods, then raises a protection strategy with combined methods, which characteristics are mainly in the achievement of complementary advantages in response speed among different current rising rate. Finally, the feasibility of this scheme will be verified by experimental tests on a 1200V-300A SiC MOSFET power module.