Trench IGBT with FS2 Technology Platform for Low Loss and High Robustness Applications

Inhalt:
In this paper, trench insulated gate bipolar transistor (IGBT) with field stop 2 (FS2) technology platform is first time demonstrated by Nexperia. FS2 technology is proposed and developed to cover a wide range of switching frequency with high efficiency and robustness. In medium speed scope [20kHz or less], the device with the current and voltage ratings of 40A and 1200V, respectively exhibits a remarkable 20% total loss reduction in terms of On-state and switch losses comparing with state-of-the-art products on the market. In high-speed application [20-40kHz], it features more robustness, while keeps similar trade-off performance between Vcesat and Eoff when compared to state-of-the-art products.