Degradation Mechanism of SiC MOSFET Module with Double Side Cooling for Electric Vehicle in Accelerated Aging Test
Konferenz: PCIM Asia 2022 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
26.10.2022 - 27.10.2022 in Shanghai, China
Tagungsband: PCIM Asia 2022
Seiten: 6Sprache: EnglischTyp: PDF
Autoren:
Han, Lubin; Liang, Lin; Kang, Yong (State Key Laboratory of Advanced Electromagnetic Engineering and Technology, School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan, Hubei, China)
Liu, Xudan; He, Maojun (Bosch (China) Investment Ltd. Shanghai, China)
Inhalt:
To investigate the role of packaging degradation and chip degradation of SiC MOSFET module with double side cooling (DSC), the customized DSC modules are aged by power cycling test for modelling the practical conditions. The parasitic resistance and thermal resistance are monitored as the indicator of health condition. The test results show that the gate of samples with defective sinter layers is damaged by high compressive stress, resulting in the shorter lifetime. Even though the lifetime of samples with healthy sinter layers is about 4~22 times than that of defective modules, the failure mode of them is VTH drift, rather than the sinter degradation.