Thick Film Copper Bonding for Highly Reliable Ag-free MetalCeramic Substrates
Konferenz: PCIM Europe 2022 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10.05.2022 - 12.05.2022 in Nürnberg, Germany
doi:10.30420/565822278
Tagungsband: PCIM Europe 2022
Seiten: 6Sprache: EnglischTyp: PDF
Autoren:
Schwoebel, Andre; Fabian, Benjamin; Schnee, Daniel; Thomas, Sven; Gunst, Stefan (Heraeus Deutschland GmbH & Co. KG, Hanau, Germany)
Mustain, Habib (Heraeus Precious Metals North America Conshohocken LLC, Conshohocken, USA)
Inhalt:
Heraeus Electronics’ silver-free Thick Film Copper Bonding (TFCB(r)) technology addresses the cost-performance gap between the active metal brazed (AMB) Si3N4 based Metal Ceramic Substrates (MCS), suitable for high-end applications, and the cost-efficient Direct Copper Bonded (DCB) Al2O3 substrates, suitable for applications with standard requirements. In this report we will demonstrate the thermal cycling capability and the peel strength of the TFCB(r) process combined with a design-to-cost Si3N4 ceramic having a lower thermal conductivity of 60 W/mK. Additionally, first results will be presented regarding the combination of the TFCB(r) process with high-thermal conductivity AlN ceramic substrates.