Common Mode DGS EMI Filter Integrated into a GaN Half Bridge Switching Cell
Konferenz: PCIM Europe 2022 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10.05.2022 - 12.05.2022 in Nürnberg, Germany
doi:10.30420/565822243
Tagungsband: PCIM Europe 2022
Seiten: 6Sprache: EnglischTyp: PDF
Autoren:
Dechant, Eduard; Seliger, Norbert (Technical University of Applied Sciences Rosenheim, Germany)
Kennel, Ralph (Technical University of Munich, Germany)
Inhalt:
This paper introduces a common mode EMI filter based on defected ground structures (DGS), which is integrated into a half bridge switching cell with Gallium Nitride (GaN) power semiconductors. A four-layer printed circuit board with a low-inductance vertical commutation loop was used for the switching cell design. The performance of the integrated DGS filter was studied by a single-phase DC/AC power conversion to an ohmic-inductive load. Measurements showed critical CM noise reduction of more than 17 dB for frequencies above the cut-off frequency of 34MHz compared to a switching cell without DGS filter.