Two-Level, Slew-Sate Control Reduces Temperature Stress of Semiconductors in Power Modules

Inhalt:
It is difficult to optimize the switching performance of IGBTs with only one fixed value for the gate resistor. This is especially true if the level of dv/dt during switching needs to be limited, as is the case for typical motor drives, and applications where conducted EMI levels need to be controlled. In this paper, we present evaluations of a simple slew-rate control gate driver IC that is operated in a 22 kW inverter. The operating advantages for an industrial motor drive in terms of junction temperature are presented by relevant measurements.