Hardware Development of an Active Gate Driver to Mitigate Oscillations of SiC MOSFET Switching Process

Inhalt:
This paper propose a hardware design of an active gate driver to mitigate oscillations of SiC-MOSFET switching process. The switching losses can be decreased by increasing the switching speed, which inevitably also causes higher oscillations. This relation leads to a trade-off between low switching losses on the one hand and low oscillation/EMI on the other hand. This trade-off can be optimized by active gate drivers. To achieve this goal, an active gate driver is developed. It is based on a two-stage gate control with switchable gate resistances and utilizes the closed-loop control strategy to adjust the gate control parameter.