Impact of Forward-Recovery Losses on Tvj, Max and Lifetime in ANPC Topology for Si IGBTs and Diodes
Konferenz: PCIM Europe 2022 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10.05.2022 - 12.05.2022 in Nürnberg, Germany
doi:10.30420/565822164
Tagungsband: PCIM Europe 2022
Seiten: 5Sprache: EnglischTyp: PDF
Autoren:
Philippou, Alexander; Colvero Schittler, Andressa; Puyadena Mier, Ainhoa; Niedernostheide, Franz-Josef (Infineon Technologies AG, Germany)
Mueller, Christian R.
Inhalt:
The impact of forward-recovery losses on Si IGBTs and diodes in the active neutral point clamped (ANPC) topology are analyzed with respect to two different pulse-width modulation (PWM) schemes. The analysis includes, in addition to [1, 2], detailed losses, maximum virtual junction temperatures Tvj,max and lifetime of the respective chips under typical operating conditions in solar applications. We demonstrate that forward-recovery losses mainly affect devices that do not limit system performance.