10 kV Reverse-Conducting Integrated Gate-Commutated Thyristors for HVDC Power Transmission
Konferenz: PCIM Europe 2022 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10.05.2022 - 12.05.2022 in Nürnberg, Germany
doi:10.30420/565822132
Tagungsband: PCIM Europe 2022
Seiten: 9Sprache: EnglischTyp: PDF
Autoren:
Guedon, Davin (LAPLACE Laboratory, Universite de Toulouse, Toulouse, France & EDF Recherche et Developpement, EDF R&D, Moret-sur-Loing, France)
Ladoux, Philippe (LAPLACE Laboratory, Universite de Toulouse, Toulouse, France)
Sanchez, Sebastien (EDF Recherche et Developpement, EDF R&D, Moret-sur-Loing, France & ICAM, Site de Toulouse, Toulouse, France)
Cornet, Sebastien (EDF Recherche et Developpement, EDF R&D, Moret-sur-Loing, France)
Vemulapati, Umamaheswara; Stiasny, Thomas; Winter, Christian (Hitachi Energy, Semiconductors, Switzerland)
Inhalt:
High-voltage direct current power transmission based on the modular multilevel converter has experienced significant developments over the last decade. This topology, whose performances depend on the characteristics of the semiconductor devices, currently includes more than a thousand sub-modules for a single ±320 kV converter-station. This article deals with 10 kV reverse-conducting integrated gatec-ommutated thyristors, the higher voltage rating of these devices along with their high current conduction capabilities could benefit high-power converter-stations. Sub-modules based on this technology have been realized and tested, power loss measurements have been performed and compared to the simulation models.