Extend Power Density and Lifetime of Latest SiC and 7th Gen IGBT Power Module thru Transfer Molded Technology

Inhalt:
As latest power devices like SiC MOSFET and 7th generation IGBT continue to improve the efficiency along with power density, it becomes a challenge for power packaging to dissipate the heat from already much miniaturized chips and protect them from high temperature high voltage and humid environment. Thus, we introduce the transfer molded technology (TMPIM) based module packaging. This module encapsulates the power devices with epoxy molding compound thru transfer molding process. Compared to conventional gel filled module, it demonstrates much improved temperature cycling performance and extended module lifetime. It also achieves a low thermal resistance and high-power module density by adopting thick copperadvanced substrate instead of baseplate. In the meantime, the manufacturing process of TMPIM is much simplified and robust. It is a great fit for applications which seek for fully utilizing the strength ofIGBT and SiC semiconductor in high reliability, power density, and robustness.