Proven Power Cycling Reliability of SmartSiC(TM) Substrate for Power Devices
Konferenz: PCIM Europe 2022 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10.05.2022 - 12.05.2022 in Nürnberg, Germany
doi:10.30420/565822081
Tagungsband: PCIM Europe 2022
Seiten: 7Sprache: EnglischTyp: PDF
Autoren:
Guiot, Eric; Picun, Gonzalo; Allibert, Frederic; Schwarzenbach, Walter; Drouin, Alexis; Bethoux, Jean-Marc; Rouchier, Severin (Soitec, France)
Leib, Juergen; Becker, Tom; Erlbacher, Tobias (Fraunhofer IISB, Germany)
Widiez, Julie (CEA Leti, France)
Inhalt:
The Smart Cu(TM) technology enables the integration of a high-quality SiC layer transfer for device yield optimization, combined with a low-resistivity handle wafer (below 5mOhm.cm) to lower device conduction and switching losses. More than 550000 cycles without any failure have been demonstrated during Power Cycling Tests, with a temperature swing of 120K. Evolution of thermal resistance is within the specification of AQG324 standards (2021 revision). This test is a validation of the reliability of our SmartSi(TM) engineered substrate.