Characterization of 3.3 kV Discrete SiC MOSFETs in Synchronous Rectification Mode for PV Current Source Inverter Applications
Konferenz: PCIM Europe 2022 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10.05.2022 - 12.05.2022 in Nürnberg, Germany
doi:10.30420/565822037
Tagungsband: PCIM Europe 2022
Seiten: 10Sprache: EnglischTyp: PDF
Autoren:
Gomez, Louis-Alexis (French Alternative Energies and Atomic Energy Commission – CEA/INES, National Institute of Solar Energy – Smart Grids Laboratory, France & LAPLACE, Universite de Toulouse, CNRS, INPT, UPS, Toulouse, France)
Alves Rodrigues, Luis Gabriel (French Alternative Energies and Atomic Energy Commission – CEA/INES, National Institute of Solar Energy – Smart Grids Laboratory, France)
Gateau, Guillaume (LAPLACE, Universite de Toulouse, CNRS, INPT, UPS, Toulouse, France)
Sanchez, Sebastien (LAPLACE, Universite de Toulouse, CNRS, INPT, UPS, Toulouse, France & Icam, Site de Toulouse, France)
Inhalt:
With the newest 3.3 kV discrete SiC MOSFET being released, Current Source Inverters (CSI) are able to be adapted to 1.5 kVOC PV strings and substitute actual voltage source-based conversion systems. In order to characterize the switching performances of these new devices, a Double-Pulse Test (DPT) circuit has been developed. The tested switching cell is based on 3.3 kV / 120 mOhm TO-263-7 discrete MOSFETs using synchronous rectification mode. This configuration implies some challenges and introduces extra body diode reverse recovery losses. This paper discusses the main choices, methods, issues and results concerning the switching event for future CSI using 3.3 kV SiC MOSFETs.