New SIPOX (SIPOS/Oxide) Edge Termination Shows Excellent Robustness and 50% Lower Leakage at Tj=150 °C for 6.5kV IGBTs

Inhalt:
This paper reports for the first time, the design features, performance and reliability evaluation of a new SIPOX-JTE (SIPOS/OXide-Junction Termination Extension) structure suitable for high voltage FRDs, IGBTs and similar devices. The concept is called SIPOX because over the termination region, the ratio of silicon/SIPOS interface area is limited and controlled by oxide segments with silicon/SIPOS interfaces only in a small percentage of the JTE’s or VLD’s p- region. By limiting the silicon/SIPOS interface area in the SIPOX-JTE concept we show by simulation and experimental results that the leakage current (Ices) at Tj=150 °C can be reduced by up to 50% in 6.5kV IGBTs. In addition, it is also shown that the SIPOX-JTE devices are stable under 150 °C HTRB test conditions and show robust H3TRB and HV-H3TRB performances during and after 1000hrs endurance period.