Next Generation 1.7 kV Chipset: Fine-Pattern Trench IGBT and Ultra-Thin FSA Diode for Traction Applications

Inhalt:
A fine pattern (distance between trenches < 2 µm) trench gate IGBT technology and an ultra-thin (< 200 µm) FSA diode have been developed at Hitachi Energy for implementation in the next generation 1.7 kV chipset. This paper describes the design and technology upgrades enabling an improved performance whilst maintaining high ruggedness in terms of reverse biased safe operating area and short circuit capability. Compared to the previous generation chipset, the fine pattern trench gate IGBT shows a reduction of 23% in saturation voltage at the same current density and switching loss, while the new ultra-thin FSA diode exhibits a reduction in leakage density of 7% and a reduction of 55% in reverse recovery energy at the same current density and switching speed.