Enhanced Gate Oxide Integrity Degradation and Reliability Improvement Due to Halo Implant Based on 0.153um CMOS

Inhalt:
The study aims to investigate enhanced gate oxide integrity degradation and reliability by halo implant. The paper will report and summarize the evaluation by studying different split of halo implant ion, energy and dose factors for improving the gate oxide integrity degradation of 0.153um CMOS technology. The purpose of testing GOI is mainly to determine the defect density of oxide layer and the charge accumulation breakdown performance. GOI test has three modes, named mode A, B and C. Mode B failures are considered defect driven, commonly referred to as extrinsic failure. Possible issues may be: contamination in the oxide film or substrate, surface roughness, thickness uniformity (localized thin oxide regions), crystalline defects in the substrate, or plasma-induced degradation. By comparing the split condition of different implant ion, energy and dose factors, the impact of adjusting halo implant on gate oxide integrity can be observed. Experimental results indicate that pure Indium implant on halo can lead to gate oxide integrity degradation, and pure Boron halo implant or Indium and Boron halo implant can efficiently enhance gate oxide integrity degradation. In addition, pure Boron halo implant may lead to poor uniformity of threshold voltage. According to the experimental results, in the future, the halo implant condition will be adjusted to Indium and Boron without changing the device parameter characteristics. At the same time, it also provides valuable experience for the subsequent improvement of gate oxide integrity degradation.