A study to use 600V GaN HEMTs to drive motors

Inhalt:
As third-generation power semiconductor devices, GaN HEMTs (gallium nitride high electron mobility transistor) provide superior performance, which from the perspective of efficiency and power density, can bring power electronic systems to the next level. How to properly drive GaN HEMTs and maximize their capability for motor-drive applications is an emerging and interesting topic. This paper demonstrates the feasibility of driving GaN HEMTs and the benefits of using them for motor-drive applications.