3.3kV SiC Power MOSFETs with High–k Gate Dielectric
Konferenz: PCIM Asia 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09.09.2021 - 11.09.2021 in Shenzhen, China
Tagungsband: PCIM Asia 2021
Seiten: 5Sprache: EnglischTyp: PDF
Autoren:
Romano, Gianpaolo; Mihaila, Andrei; Knoll, Lars (Hitachi ABB Power Grids Ltd., Semiconductors, Lenzburg, Switzerland)
Inhalt:
The channel contribution of the overall resistance of planar 3.3kV MOSFETs was investigated and improved by using a high-k gate dielectric. Despite a somehow large pitch, the channel contribution could be reduced significantly. In dynamic characterization the increased input capacitance did not show a reduction in switching speed. Moreover, reliable repetitive operation and rugged behavior in RBSOA could be demonstrated.