Circuit Protection with SiC FETs in dual-gate configuration

Inhalt:
Interest in solid-state circuit breakers and solid-state power controllers has grown rapidly in recent years. SiC JFETs have long been considered ideal devices for this application, given their ability to have low on-state resistance at high voltage ratings, without compromising their ability to limit current when needed. We examine the use of normally-off SiC FETs in a dual gate configuration to simplify the development of high current DC and AC circuit breakers.