Variety of sensing method to reliably measure the switching loss of SiC/GaN devices in a small space and Issues

Inhalt:
In the switching loss analysis and inductor loss analysis of SiC/GaN devices, there are large differences in the waveforms depending on the probing method. So far, there has been no opportunity to verify these differences with data that clearly compares with actual measurement data. Therefore, in this presentation, we will examine the differences between various probing methods and explain the optimal probing method based on the results of switching analysis of GaN devices.